低压MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ

低压MOS管DO3400B可替代AO3400 SOT-23 N管 30V5.8A 26mΩ

型号：DO3400B

N管

(相关资料图)

电压电流：30V5.8A

内阻：26mΩ

封装：SOT-23

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications. 

Features：

1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra RDS(ON). 

5) Excellent package for good heat dissipation.

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